tm ?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt november 2008 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings units v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c60 a collector current @ t c = 100 o c30 a i cm (1) pulsed collector current @ t c = 25 o c 90 a i f diode continuous forward current @ t c = 100 o c 30 a p d maximum power dissipation @ t c = 25 o c339 w maximum power dissipation @ t c = 100 o c132 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.38 o c / w r jc (diode) thermal resistance, junction to case - 1.2 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g e c e c g collector (flange) FGH30N120FTD 1200v, 30a trench igbt features ? field stop trench technology ? high speed switching ? low saturation voltage: v ce(sat) = 1.6v @ i c = 30a ? high input impedance ? rohs compliant applications ? induction heating and microwave oven ? soft switching applications general description using advanced field stop trenc h technology, fairchild?s 1200v trench igbts offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggedness. this device is desi gned for soft switching applica- tions.
2 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package re el size tape width quantity FGH30N120FTD FGH30N120FTDtu to-247 - - 30 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na on characteristics v ge(th) g-e threshold voltage i c = 30ma, v ce = v ge 3.5 6 7.5 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v -1.62 v i c = 30a , v ge = 15v, t c = 125 o c -2.0- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 5140 - pf c oes output capacitance - 150 - pf c res reverse transfer capacitance - 95 - pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 ? , v ge = 15v, resistive load, t c = 25 o c -31- ns t r rise time - 101 - ns t d(off) turn-off delay time - 198 - ns t f fall time - 259 - ns e on turn-on switching loss - 0.54 - mj e off turn-off switching loss - 1.16 1.51 mj e ts total switching loss - 1.70 - mj t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 ? , v ge = 15v, resistive load, t c = 125 o c -40- ns t r rise time - 127 - ns t d(off) turn-off delay time - 211 - ns t f fall time - 364 - ns e on turn-on switching loss - 0.74 - mj e off turn-off switching loss - 1.63 - mj e ts total switching loss - 2.37 - mj q g total gate charge v ce = 600v, i c = 30a, v ge = 15v - 208 - nc q ge gate to emitter charge - 41 - nc q gc gate to collector charge - 97 - nc
3 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 30a t c = 25 o c- 1.3 1.7 v t c = 125 o c- 1.3 - t rr diode reverse recovery time i f =30a, di/dt = 200a/ s t c = 25 o c - 730 - ns t c = 125 o c - 775 - i rr diode peak reverse recovery current t c = 25 o c- 43 - a t c = 125 o c- 47 - q rr diode reverse recovery charge t c = 25 o c- 5.9 - c t c = 125 o c - 18.2 -
4 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 02468 0 30 60 90 120 150 180 9v 17v 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 02468 0 30 60 90 120 150 180 17v 9v 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 051015 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 30a 60a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 048121620 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance 048121620 0 4 8 12 16 20 60a i c = 15a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 110 0 2000 4000 6000 8000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 200 250 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 3000 0.01 0.1 1 10 100 200 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 20406080100 10 100 500 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 0 20406080100 50 100 1000 2000 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] gate resistance
6 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics figure 18. forward characteristics 10 20 30 40 50 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 1200 0 20406080100 0.1 1 10 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 10 20 30 40 50 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2000 0.0 0.5 1.0 1.5 0.1 1 10 100 t j = 25 o c t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a]
7 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt typical performance characteristics figure 19. reverse current figure 20. stored charge figure 21. revers e recovery time figure 22. transient thermal impedance of igbt 10 20 30 40 20 30 40 50 200a/ s di/dt = 100a/ s reverse recovery currnet, i rr [a] forward current, i f [a] 10 20 30 40 6 8 10 12 14 16 18 20 200a/ s di/dt = 100a/ s stored recovery charge, q rr [ c ] forward current, i f [a] 10 20 30 40 400 600 800 1000 200a/ s di/dt = 100a/ s reverse recovery time, t rr [ns] forward current, i f [a] t 1 p dm t 2
8 www.fairchildsemi.com FGH30N120FTD rev. a FGH30N120FTD 1200v, 30a trench igbt mechanical dimensions to-247ab (fks pkg code 001) dimensions in millimeters
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